Mosfet IRF640 N Chanel

Description Type Designator: IRF9640 Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 125 W Maximum Drain-Source Voltage |Vds|: 200 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 11 A Maximum Junction Temperature (Tj): 150 °C Total Gate Charge (Qg): 44 nC Drain-Source Capacitance (Cd): 1200 pF Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm Package: TO220